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129 results

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Page 1
Non-Abelian Inverse Anderson Transitions.
Zhang W, Wang H, Sun H, Zhang X. Zhang W, et al. Phys Rev Lett. 2023 May 19;130(20):206401. doi: 10.1103/PhysRevLett.130.206401. Phys Rev Lett. 2023. PMID: 37267536
Inverse Anderson transitions, where the flat-band localization is destroyed by disorder, have been wildly investigated in quantum and classical systems in the presence of Abelian gauge fields. ...Our results establish the connection between inverse Anderson transiti …
Inverse Anderson transitions, where the flat-band localization is destroyed by disorder, have been wildly investigated in quan …
ARPES Signatures of Few-Layer Twistronic Graphenes.
Nunn JE, McEllistrim A, Weston A, Garcia-Ruiz A, Watson MD, Mucha-Kruczynski M, Cacho C, Gorbachev RV, Fal'ko VI, Wilson NR. Nunn JE, et al. Nano Lett. 2023 Jun 14;23(11):5201-5208. doi: 10.1021/acs.nanolett.3c01173. Epub 2023 May 26. Nano Lett. 2023. PMID: 37235208 Free PMC article.
However, for tDBG at teta = 1.5 0.2, close to the magic angle teta = 1.3, a flat band is found near the Fermi level with measured bandwidth E(w) = 31 5 meV. An analysis of the gap between the flat band and the next valence band shows deviations between …
However, for tDBG at teta = 1.5 0.2, close to the magic angle teta = 1.3, a flat band is found near the Fermi level with measu …
Terminal Deuterium Atoms Protect Silicon from Oxidation.
Li T, Peiris CR, Aragonès AC, Hurtado C, Kicic A, Ciampi S, MacGregor M, Darwish T, Darwish N. Li T, et al. ACS Appl Mater Interfaces. 2023 Oct 11;15(40):47833-47844. doi: 10.1021/acsami.3c11598. Epub 2023 Sep 28. ACS Appl Mater Interfaces. 2023. PMID: 37768872
Here, we show that when hydrogen is replaced by deuterium, the Si-D surface becomes significantly more resistant to oxidation when either positive or negative voltages are applied to the Si surface. Si-D surfaces are more resistant to oxidation, and their current-voltag …
Here, we show that when hydrogen is replaced by deuterium, the Si-D surface becomes significantly more resistant to oxidation when either po …
Impacts of Annealing Conditions on the Flat Band Voltage of Alternate La2O3/Al2O3 Multilayer Stack Structures.
Feng XY, Liu HX, Wang X, Zhao L, Fei CX, Liu HL. Feng XY, et al. Nanoscale Res Lett. 2016 Dec;11(1):394. doi: 10.1186/s11671-016-1623-2. Epub 2016 Sep 13. Nanoscale Res Lett. 2016. PMID: 27620192 Free PMC article.
The mechanism of flat band voltage (VFB) shift for alternate La2O3/Al2O3 multilayer stack structures in different annealing condition is investigated. The samples were prepared for alternate multilayer structures, which were annealed in different conditions. …
The mechanism of flat band voltage (VFB) shift for alternate La2O3/Al2O3 multilayer stack structures in different annea …
Synergizing a Large Ordinary Nernst Effect and Axis-Dependent Conduction Polarity in Flat Band KMgBi Crystals.
Ochs AM, Fecher GH, He B, Schnelle W, Felser C, Heremans JP, Goldberger JE. Ochs AM, et al. Adv Mater. 2024 Jan;36(2):e2308151. doi: 10.1002/adma.202308151. Epub 2023 Nov 29. Adv Mater. 2024. PMID: 37853575
Along these lines, KMgBi is a layered, narrow gap semiconductor near a critical state between multiple Dirac phases due to the presence of a flat band near the Fermi level. The valence band is highly anisotropic with minimal cross-plane dispersion, which, in combina …
Along these lines, KMgBi is a layered, narrow gap semiconductor near a critical state between multiple Dirac phases due to the presence of a …
Ferroelectricity in Polar Polymer-based FETs: A Hysteresis Analysis.
Georgiou V, Veksler D, Campbell JP, Shrestha PR, Ryan JT, Ioannou DE, Cheung KP. Georgiou V, et al. Adv Funct Mater. 2018;28:10.1002/adfm.201705250. doi: 10.1002/adfm.201705250. Adv Funct Mater. 2018. PMID: 31080381 Free PMC article.
There is an increasing number of reports on polar polymer-based Ferroelectric Field Effect Transistors (FeFETs), where the hysteresis of the drain current - gate voltage (I(d)-V(g)) curve is investigated as the result of the ferroelectric polarization effect. ...Careful ob …
There is an increasing number of reports on polar polymer-based Ferroelectric Field Effect Transistors (FeFETs), where the hysteresis of the …
Energy Harvesting Using Cotton Fabric Embedded with 2D Hexagonal Boron Nitride.
Mahapatra PL, Singh AK, Lahiri B, Kundu TK, Roy AK, Kumbhakar P, Tiwary CS. Mahapatra PL, et al. ACS Appl Mater Interfaces. 2022 Jul 6;14(26):30343-30351. doi: 10.1021/acsami.2c04941. Epub 2022 Jun 21. ACS Appl Mater Interfaces. 2022. PMID: 35727691
Systematic observation of the real-time motion sensing showed a peak-to-peak voltage output of 1.5 V for each heart rate pulse. The as-fabricated device showed a high voltage output of up to 10 V upon applying a pressure of 3 MPa. The FTIR results and DFT calculatio …
Systematic observation of the real-time motion sensing showed a peak-to-peak voltage output of 1.5 V for each heart rate pulse. The a …
Analyzing Acceptor-like State Distribution of Solution-Processed Indium-Zinc-Oxide Semiconductor Depending on the In Concentration.
Kim D, Lee H, Yun Y, Park J, Zhang X, Bae JH, Baang S. Kim D, et al. Nanomaterials (Basel). 2023 Jul 26;13(15):2165. doi: 10.3390/nano13152165. Nanomaterials (Basel). 2023. PMID: 37570484 Free PMC article.
An Arrhenius plot was used to determine electrical parameters such as the activation energy, flat band energy, and flat band voltage. Two calculation methods, the simplified charge approximation and the Meyer-Neldel (MN) rule-based carrier-surfa …
An Arrhenius plot was used to determine electrical parameters such as the activation energy, flat band energy, and flat …
Single-Walled Carbon-Nanotubes-Based Organic Memory Structures.
Fakher S, Nejm R, Ayesh A, Al-Ghaferi A, Zeze D, Mabrook M. Fakher S, et al. Molecules. 2016 Sep 2;21(9):1166. doi: 10.3390/molecules21091166. Molecules. 2016. PMID: 27598112 Free PMC article.
SWCNTs-based memory devices exhibited clear hysteresis in their electrical characteristics (capacitance-voltage (C-V) for MIS structures, as well as output and transfer characteristics for transistors). ...The hysteresis in the output and transfer characteristics, the shif …
SWCNTs-based memory devices exhibited clear hysteresis in their electrical characteristics (capacitance-voltage (C-V) for MIS structu …
Reliability and Stability Improvement of MOS Capacitors via Nitrogen-Hydrogen Mixed Plasma Pretreatment for SiC Surfaces.
Wei S, Bai J, Xie W, Su Y, Qin F, Wang D. Wei S, et al. ACS Appl Mater Interfaces. 2023 Apr 12;15(14):18537-18549. doi: 10.1021/acsami.3c00995. Epub 2023 Mar 28. ACS Appl Mater Interfaces. 2023. PMID: 36987379
We investigated the effect of nitrogen-hydrogen (NH) mixed plasma pretreatment of 4H-SiC surfaces on SiC surface properties, SiO(2)/SiC interface quality, and the reliability and voltage stability of metal-oxide-semiconductor (MOS) capacitors. The NH plasma pretreatment de …
We investigated the effect of nitrogen-hydrogen (NH) mixed plasma pretreatment of 4H-SiC surfaces on SiC surface properties, SiO(2)/SiC inte …
129 results